电导率
氧化钇稳定氧化锆
材料科学
阿累尼乌斯方程
离子
大气温度范围
扩散
分析化学(期刊)
活化能
立方氧化锆
热力学
化学
物理化学
复合材料
陶瓷
物理
有机化学
色谱法
作者
Shuhui Guan,Cheng Shang,Zhi‐Pan Liu
标识
DOI:10.1021/acs.jpcc.0c04331
摘要
The temperature and composition dependence of the ion conductivity for yttria-stabilized zirconia (YSZ) have been hotly studied over the past 50 years. Due to the sluggish oxygen anion diffusion and the low doping of oxide, the computation of ion conductivity traditionally has to be performed with empirical force field potentials in order to achieve the required long timescale, which, however, fails to reproduce some critical observations in experiment, e.g., the conductivity maximum achieved at 8 mol % YSZ at the operating temperatures. Here by using our recently developed Y–Zr–O global neural network (G-NN) potential, we are able to carry out a series of long-time molecular dynamics simulations for YSZ at 6.7, 8, 10, and 14.3 mol % over a wide temperature range (800–2000 K). This finally quantitatively resolves the effects of temperature and composition on the ion conductivity. We confirm the key experimental findings that (i) 8 mol % YSZ has the highest ion conductivity, 0.16–0.51 S/cm, at 1200–1600 K, agreeing with 0.16–0.55 S/cm in experiment, and the maximum conductivity shifts to the higher Y composition above 1600 K and (ii) over the wide temperature range (800–2000 K) the ion conductivity of 8YSZ exhibits the non-Arrhenius behaviors with two different activation energies. The physical origin for these peculiar phenomena is revealed at the atomic level by analyzing the MD pathways. The presence of monoclinic phase and the aggregation of oxygen vacancy along ⟨112⟩ are two key factors to retard oxygen diffusion. For 8 mol % YSZ, the oxygen movement is dominated by local vibrations below 1000 K but becomes delocalized above 1000 K, which results in the gradual aggregation of oxygen vacancy along a new ⟨112⟩ direction. Our results demonstrate that the G-NN potential from unbiased machine learning of the global potential energy surface can meet the high standard in both accuracy and speed required for material simulation.
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