Advancements Towards Single Site Information Storage and Processing Using HfO2 Resistive Random Access Memory (ReRAM)

Resistive Random Access Memory (ReRAM) has attracted much attention among researchers due to its fast switching speeds, lower switching voltages, and feasible integration into industry compatible CMOS processing. These characteristics make ReRAM a viable candidate for next-generation Non- Volatile Memory. Transition-Metal-Oxides have been proven to be excellent materials for ReRAM applications. This work investigates the effect of various, post-deposition anneals (PDA) on the switching parameters of Ni/Cu/HfO2/TiN Resistive Memory Devices (RMD). Results are presented in the form of a Small Business Innovation Research (SBIR) grant proposal. The use of the SBIR format emphasizes understanding of the experimental design, commercial viability, and broader impacts of ReRAM technology.