负阻抗变换器
隧道场效应晶体管
电容
材料科学
铁电性
光电子学
晶体管
阈下斜率
磁滞
场效应晶体管
半导体
摇摆
电气工程
电压
凝聚态物理
物理
工程类
电极
电介质
电压源
量子力学
声学
作者
Chien Liu,Ping Guang Chen,M.-J. Xie,Shao Nong Liu,Jun Wei Lee,Shao Jia Huang,Sally Liu,Yu Sheng Chen,Heng Yuan Lee,M.-H. Liao,Pang Shiu Chen,Min-Hung Lee
标识
DOI:10.7567/jjap.55.04eb08
摘要
Abstract The concept of ferroelectric (FE) negative capacitance (NC) may be a turning point in overcoming the physical limitations imposed by the Boltzmann tyranny to realize next-generation state-of-the-art devices. Both the body factor ( m -factor) and the transport mechanism ( n -factor) are simultaneously improved by integrating an NC with a tunnel FET (TFET). The modeling approach is discussed in this study as well as the NC physics. By optimizing the thicknesses of FE, semiconductor, and interfacial layers, the capacitance of the FE layers is modulated to match that of a MOS resulting in the smallest subthreshold swing that is also hysteresis-free. An ultrathin-body double gate tunnel FET (UTB-DG-TFET) exhibits a steep slope (a subthreshold swing below 10 mV/dec over more than 4 orders of magnitude) for low-power applications (<0.2 V switching voltage) to realize next-generation state-of-the-art devices.
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