Advances in preparation techniques for high‐purity silicon carbide ceramics

Abstract High‐purity silicon carbide (SiC) ceramics are critical materials for advanced applications in semiconductors, aerospace, and chemical industries due to their exceptional properties, such as high thermal conductivity, chemical stability, and mechanical strength. With increasing demands for high‐performance and contamination‐free components, the development of efficient and scalable preparation methods for high‐purity SiC ceramics has become a global research focus. This paper summarizes the advancements in manufacturing techniques for high‐purity SiC ceramics, including recrystallization sintering, pressureless sintering (PS), hot pressing (HP), spark plasma sintering (SPS), and additive manufacturing (AM). The fundamental sintering mechanisms, processing parameters, material characteristics and associated challenges of each method are discussed. Finally, this paper outlines the current limitations and provides forward‐looking strategies to meet the growing demand for high‐purity and high‐performance SiC ceramics in cutting‐edge technologies.