GSM演进的增强数据速率
模式(计算机接口)
电子
霍尔效应
凝聚态物理
物理
计算物理学
计算机科学
磁场
量子力学
电信
操作系统
作者
Ze-Rong Jiang,Yiren Zhu,Hailong Du,Miao Xue,Na Wu,YUNHUI ZHOU,Chaofeng Sang,Xue Lei,J.X. Li,Guoyao Zheng,X. J. Song,Dezhen Wang
标识
DOI:10.1088/1361-6587/adfd83
摘要
Abstract In this paper, we investigate the impact of the parallel electron response and the Hall effect on edge-localized mode (ELM) crashes using the BOUT++ three-field model applied to a 1 MA H-mode discharge on HL-3. A scan of the edge safety factor q and magnetic shear s shows that the ratio HD of the Hall scaling factor to the dynamo scaling factor exceeds 0.3, indicating that the Hall effect at the pedestal cannot be neglected in HL-3. Simulations reveal that the drift-Alfvén wave (DAW) instability, driven by the parallel electron response, enhances the linear growth rate and hinders turbulence propagating to the inner part of the pedestal and the scrape-off layer, thereby reducing the ELM size. Impacts of E r shear on the DAW instability are studied by modulating the shear flow. Both co-directional (shear flow in the same direction as the ion diamagnetic drift) and counter-directional (shear flow in a different direction from the ion diamagnetic drift) flows do not alter DAW destabilization, but they weaken its suppression of turbulence transport and reduce the inward shift of the crash location. Compared to counter-flow, the DAW instability can lead to premature termination of the ELM crash and the suppressive effect of DAW instability on the ELM crash is significantly reduced when considering co-flow.
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