可扩展性
计算机科学
德拉姆
通用存储器
交错存储器
内存管理
注册存储器
嵌入式系统
非易失性随机存取存储器
计算机存储器
计算机体系结构
半导体存储器
并行计算
分布式计算
内存刷新
计算机硬件
操作系统
作者
Saeideh Alinezhad Chamazcoti,Mohit Gupta,Hyungrock Oh,Timon Evenblij,Francky Catthoor,Manu Perumkunnil,Gouri Sankar Kar,A. Furnémont
出处
期刊:IEEE Transactions on Circuits and Systems I-regular Papers
[Institute of Electrical and Electronics Engineers]
日期:2022-11-28
卷期号:70 (2): 733-746
被引量:7
标识
DOI:10.1109/tcsi.2022.3222573
摘要
Main memory system design and corresponding technology requirements have become increasingly challenging for data-dominated high-performance applications. To address the leakage and scalability issues of the conventional DRAM-based memory, new memory technologies with ultra-low leakage and potential for high scalability have been explored extensively over the last decade. However, none of them are mature enough to serve as a drop-in replacement for DRAM. In this paper, we propose a hybrid main memory system solution for utilizing new memory technologies with specific features, based on the target application characteristics and system configurations. To this end, we examine two new memories, 1S-1VCMA and IGZO-based DRAM, along with conventional DRAM in the context of hybrid main memory solutions for high-capacity and low-power Pareto-optimizations, respectively. To better evaluate the power and performance, we consider the page-fault modeling in our evaluations. The results of the simulation show that different combinations of memory technologies in the hybrid memory system, different memory capacities, and different storage systems could provide a promising solution in the system regarding the characteristics of running applications and the requirements of the system.
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