Photoelectrochemical behavior, XPS and Auger of n‐In2S3

Abstract n‐In 2 S 3 has been prepared by CVT method. The photoelectrochemical behavior of n‐In 2 S 3 in a polysulfide redox solution was investigated. It was found that photoetching remarkably increased the fill factor. The maximum quantum efficiency of carrier collection reached 95% after 12h irradiation at 100 mW/cm 2 at an applied potential of + 1.2 V. XPS and Auger analysis were carried out for examining surface and bulk concentration. The photoetching effect could be satisfactorily explained.