Review—Exploring Emerging Materials for Memristor Fabrication: A Review of Recent Progress

This paper presents a comprehensive analysis of various materials employed in fabrication of memristor devices, including transition metal oxides (also known as Binary oxides), low dimension materials (two-dimensional materials), perovskite materials, organic compounds, etc. The fabrication methods, properties, and impact on device performance for different material categories are also discussed. The paper covers the significance of materials in memristor technology and explores specific examples of transition metal oxides, organic materials, and two-dimensional materials. Furthermore, the review discusses challenges related to stability, compatibility with complementary metal oxide semiconductor technology, and the need for understanding the different phenomena of formation and rupturing of filament which governs the memristor mechanisms and underlying physics. The paper also emphasizes opportunities for future research, such as stability enhancement, neuromorphic computing applications, and the discoveries of novel materials and their concepts. This review will provide a comprehensive summary to the researchers making efforts to understand various materials and their fundamental properties in the fabrication of memristors and their potential for use in practical applications.