兴奋剂
量子点
限制
材料科学
富勒烯
纳米技术
光电子学
图层(电子)
电子
计算机科学
物理
机械工程
工程类
量子力学
作者
Mingjian Yuan,Oleksandr Voznyy,David Zhitomirsky,Pongsakorn Kanjanaboos,Edward H. Sargent
标识
DOI:10.1002/adma.201404411
摘要
The spatial location of the predominant source of performance-limiting recombination in today's best colloidal quantum dot (CQD) cells is identified, pinpointing the TiO2:CQD junction; then, a highly n-doped PCBM layer is introduced at the CQD:TiO2 heterointerface. An n-doped PCBM layer is essential to maintain the depletion region and allow for efficient current extraction, thereby producing a record 8.9% in overall power conversion efficiency. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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