Controllable resistive switching of STO:Ag/SiO2-based memristor synapse for neuromorphic computing

Resistive random-access memory (RRAM) is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing. Here, we have developed a STO:Ag/SiO2 bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability. The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains, which could fully mimic the potentiation and depression behavior like a bio-synapse. Several synaptic plasticity functions, including long-term potentiation (LTP) and long-term depression (LTD), paired-pulsed facilitation (PPF), spike-rate-dependent-plasticity (SRDP), and post-tetanic potentiation (PTP), are faithfully implemented with the fabricated memristor. Moreover, to demonstrate the feasibility of our memristor synapse for neuromorphic applications, spike-time-dependent plasticity (STDP) is also investigated. Based on conductive atomic force microscopy observations and electrical transport model analyses, it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of ~103 along with a good endurance and stability suitable for nonvolatile memory applications. Before fully electroforming, the gradual conductance modulation of Ag/STO:Ag/SiO2/p++-Si memristor can be realized, and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction. This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.