材料科学
钙钛矿(结构)
电致发光
降级(电信)
X射线光电子能谱
发光二极管
光电子学
热稳定性
二极管
热的
离子
表征(材料科学)
光谱学
化学稳定性
热不稳定性
接口(物质)
不稳定性
宽禁带半导体
化学工程
纳米技术
化学物理
光电发射光谱学
温度循环
作者
Ying‐Ying Li,Ying‐Ying Li,Yingqi Teng,Yang Shen,Long‐Xue Cao,Shi‐Chi Feng,Xin‐Mei Hu,Yu‐Hang Zhang,Hao Ren,Yueyue Li,Yueyue Li,Jian‐Xin Tang
标识
DOI:10.1002/adfm.202526462
摘要
ABSTRACT The operational instability of perovskite light‐emitting diodes (PeLEDs), particularly under thermal stress, remains a major obstacle to commercialization. Here, we combine device characterization with in situ photoelectron spectroscopy (PES) to elucidate thermal degradation mechanisms in mixed‐halide blue PeLEDs, revealing a strong dependence on electron transport layers (ETLs). Devices employing 1,3,5‐tris(N‐phenylbenzimidazole‐2‐yl) benzene (TPBi) exhibit rapid failure due to weak physical interfacial contact, which leads to thermal detachment and severe morphological changes. In contrast, devices based on 2,4,6‐tris[3‐(diphenylphosphinyl)phenyl]‐1,3,5‐triazine (POT2T) retain 90% of their initial efficiency at 80°C, owing to strong chemical bonding at the interface and high thermal stability. Importantly, PES reveals universal Cl ion migration from the perovskite into both ETLs as the primary origin of electroluminescence spectral shifts. These findings provide new insights into the dual role of interfacial stability and ion migration, highlighting the critical need to engineer robust chemical interfaces to suppress degradation pathways and achieve stable PeLEDs.
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