Edge-of-chaos learning achieved by ion-electron–coupled dynamics in an ion-gating reservoir

Physical reservoir computing has recently been attracting attention for its ability to substantially reduce the computational resources required to process time series data. However, the physical reservoirs that have been reported to date have had insufficient computational capacity, and most of them have a large volume, which makes their practical application difficult. Here, we describe the development of a Li + electrolyte–based ion-gating reservoir (IGR), with ion-electron–coupled dynamics, for use in high-performance physical reservoir computing. A variety of synaptic responses were obtained in response to past experience, which were stored as transient charge density patterns in an electric double layer, at the Li + electrolyte/diamond interface. Performance for a second-order nonlinear dynamical equation task is one order of magnitude higher than memristor-based reservoirs. The edge-of-chaos state of the IGR enabled the best computational capacity. The IGR described here opens the way for high-performance and integrated neural network devices.