热电效应
材料科学
热电材料
相变
凝聚态物理
化学物理
相(物质)
塞贝克系数
功勋
透射电子显微镜
原子单位
纳米技术
纳米尺度
热导率
光电子学
热力学
复合材料
化学
物理
量子力学
有机化学
作者
Ziyang Huang,Pei Li,Yuxuan Hou,Peili Zhao,Shanshan Wu,Ruilong Huang,Zheng He,Ru Xing,Shuangfeng Jia,Jianbo Wang
标识
DOI:10.1002/aenm.202503674
摘要
Abstract SnSe maintains a high figure of merit (ZT) at elevated temperatures, which is closely linked to its atomic structure. However, the nature of its high‐temperature (HT) phase remains controversial, primarily due to the lack of direct observations for thermal‐induced structural change. Here, the layer‐shuffling phase transition mechanism is characterized at the atomic scale by in situ transmission electron microscopy (TEM), assisted by theoretical calculations and machine learning. Notably, a slightly distorted HT α phase dominates at elevated temperatures, likely induced by the breakdown of long‐range coherence because of the dynamic disorder of Sn atoms. Further investigations into the electrical and thermal transport properties indicate that the HT α phase primarily contributes to the excellent thermoelectric performance of SnSe reported previously. This study provides a fundamental understanding of structure‐thermoelectric property correlations, paving the way for the development of advanced thermoelectric materials.
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