硅
一氧化硅
材料科学
成核
堆积
纳米结构
一氧化碳
化学物理
一氧化碳
氧化硅
纳米技术
星团(航天器)
结晶学
光电子学
催化作用
化学
冶金
有机化学
程序设计语言
生物化学
氮化硅
计算机科学
作者
Ruifeng Zhang,Mingwen Zhao,S. T. Lee
标识
DOI:10.1103/physrevlett.93.095503
摘要
Using density-functional calculations, we show that the energetically favorable configurations of silicon monoxide clusters (SiO)n for n> or =5 facilitate the nucleation and growth of silicon nanostructures as the clusters contain sp3 silicon cores surrounded by silicon oxide sheaths. The frontier orbitals of (SiO)n clusters are localized to a significant degree on the silicon atoms on the surface, providing high reactivity for further stacking with other clusters. The oxygen atoms in the formed larger clusters prefer to migrate from the centers to the exterior surfaces, leading to the growth of sp3 silicon cores.
科研通智能强力驱动
Strongly Powered by AbleSci AI