Towards increasing of lateral dimension of Molybdenum disulphide MoS2

The growth process of molybdenum disulfide (MoS₂) films on SiO₂, Al₂O₃ and BN substrates is presented. Samples were measured by Raman spectroscopy and Secondary Ion Mass Spectrometry to investigate mechanism of increase lateral dimensions and quality of growth material. Size of obtained layers is crucial for further processing and application into current microelectronic devices. Considering all the substrates used in sulfurization process of molybdenum layers, hexagon Boron Nitride (hBN) is the most promising material. It is the result of its high crystalline quality and lack of oxygen atoms, which diffuse to surface during production process in 750°C and disallow to increase dimensions of MoS₂. Described method of sulfurization creates possibility of production of that material on large area substrates and easy integration with other two dimensional compounds like graphene, WS₂, SiC, hBN for new types of electronic applications.