材料科学
钙钛矿(结构)
薄膜晶体管
薄膜
晶体管
光电子学
纳米技术
化学工程
图层(电子)
电气工程
工程类
电压
作者
Ning Guo,Juan Li,Sharon S. Yang,Jianjun Zhang,Jian Ni,Hongkun Cai
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2021-07-07
卷期号:32 (39): 395704-395704
被引量:4
标识
DOI:10.1088/1361-6528/ac0d1f
摘要
The effects of dimensional structure on the properties of lead iodide perovskite (C8H9NH3)2(CH3NH3)n-1PbnI3n+1were investigated. Furthermore, perovskite thin films with different dimensionalities were applied as the channel layer of thin film transistors (TFT). The electrical performance and stability of TFT devices were significantly improved through the regulation of dimensional microstructure of the perovskites. As a result, the quasi-2D (n = 6) perovskite TFTs achieved a field-effect mobility (μFE) of 3.90 cm2V-1s-1, with 104on-off current ratio and -1.85 V threshold voltage, which can be maintained well after 4 days without degradation at 30% ambient humidity. Moreover, the electrical performance of the TFTs based on Pure-2D and Quasi-2D perovskite also exhibited a good bias stability.
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