The plasma enhanced chemical vapor deposition(PECVD) system was introduced which is the core equipment of amorphous silicon thin film solar cell production line,and its importance was described.The preparation of amorphous silicon thin film is the key technology for manufacturing the amorphous silicon solar cell,and the PECVD is the most common method of preparation.The technology of PECVD is developed rapidly with the advantages of deposition in relatively low temperature,large area and uniform film,etc.The silicon film layer of P,I,N which is the key structure of amorphous silicon solar cell is produced by the PECVD system.The structure characteristics,technology index,working principle and technical process were analyzed.The structure and configuration of deposition chamber were designed and calculated.The conversion efficiency of the amorphous silicon solar cell can reach 6%.