Synthesis and Characterization of Zirconium Disulfide Single Crystals and Thin‐Film Transistors Based on Multilayer Zirconium Disulfide Flakes

Abstract Single crystals of ZrS2 of the Group IVB transition metal dichalcogenide are synthesized by a chemical vapor transport method. The crystals are characterized by Raman spectroscopy, X‐ray diffraction, X‐ray photoelectron spectroscopy, and energy dispersive X‐ray spectroscopy. Field‐effect transistors are fabricated on Si substrates using exfoliated multilayer ZrS2 flakes as a channel material. N‐channel characteristics with an on/off ratio of approximately 200 are observed, and the field‐effect mobility is estimated. The large hysteresis in the transfer curves and the time‐dependent drain‐to‐source current can be attributed to the charge‐trapping centers at the ZrS2/SiO2 interface. These results imply the significance of the interface and the potential applicability of ZrS2 as a novel 2D material for nanoelectronic devices.