Drift velocity saturation in field-effect transistors based on single CdSe nanowires

and decreases monotonically with the increase of charge density, indicating that the electron-phonon scattering mechanism dominates at high electric field. Saturation drift velocity is an important figure-of-merit which characterizes the high electric field transport performance in FETs. As far as we know, this is the first experimental report on saturation drift velocity in CdSe NW FETs, which may provide valuable guidance for the design of nanoelectronic and optoelectronic devices based on CdSe NWs in the future.