矫顽力
钆镓石榴石
材料科学
磁各向异性
溅射
退火(玻璃)
表面粗糙度
薄膜
凝聚态物理
复合材料
光学
纳米技术
磁场
磁化
外延
图层(电子)
物理
量子力学
作者
Duc Duong Viet,Phuoc Cao Van,Trinh Nguyen Thi,Ha Yeong Ahn,Viêt Cao,Junghyo Nah,Ganghwi Kim,Ki-Suk Lee,Ji Wan Kim,Jong‐Ryul Jeong
标识
DOI:10.1016/j.jallcom.2022.166800
摘要
We have investigated the magnetic properties of thulium iron garnet (Tm3Fe5O12, TmIG) thin films grown on {111} gadolinium gallium garnet (Gd3Ga5O12, GGG) substrates fabricated via the facing target sputtering method. The annealing temperature (Ta), thickness (tf), and roughness were systematically controlled in order to obtain the perfect magnetic properties of the film showing perpendicular magnetic anisotropy (PMA) and large coercive field, which are the requisites for non-volatile magnetic memory device applications. Here, we demonstrated that the Ta acts as the crucial parameter both for obtaining the high quality of the film surface and engineering the direction of the magnetic anisotropy from the in-plane to out-of-plane. Through the further optimization process with a function of the tf, we successfully achieved the best condition for the PMA films. Specifically, the sample fabricated at a tf of ≤ 20 nm and Ta of 1000 ℃ showed the perfect PMA. Furthermore, the surface roughness of the substrate mainly contributes to the enhancement of the coercive field of the perpendicular magnetic anisotropic films. We speculate that the drag force from the pinning energy induced by the interfacial roughness retarded the domain wall motion at the TmIG/GGG interface, resulting in enhanced coercivity.
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