直接结合
纳米柱
材料科学
阳极连接
绝缘体上的硅
引线键合
晶片键合
硅
平版印刷术
电子束光刻
纳米技术
光电子学
工程物理
光学
炸薯条
纳米结构
抵抗
计算机科学
工程类
物理
电信
图层(电子)
作者
J. Haisma,Nico Hattu,J. T. C. M. Pulles,Esther Steding,Jan C. G. Vervest
出处
期刊:Applied optics
[The Optical Society]
日期:2007-09-19
卷期号:46 (27): 6793-6793
被引量:25
摘要
We present a number of recent evaluations of direct bonding, a glueless bonding technology, performed under ambient conditions. If combined with bond-strengthening, this geometry-conserving technology is well suited for an application in far ultraviolet immersion lithography. Our term beyond direct bonding refers to taking at least one additional technological step beyond direct bonding, involving chemical interface engineering, advanced silicon-on-insulator (SOI) technology, whereby the unwanted influence of dilatation mismatch is obviated. The combination of successive direct bonding, nanopillar lattice structures and silicon-technological engineering makes it possible for us to arrange quantum dots, wires, and planes in a transversal cascade. We also address the interrelationship between direct bonding and elasticity, as well as plasticity; the latter is in relation to direct bonded glass wafers that are thermally treated to create the geometric shape, e.g., required for specific lab-on-a-chip components with a three-dimensional overall configuration.
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