TID and DSEE Effects in a GaN FET Capable PWM Controller IC Prototype for Space Applications

New technology trends in space, such as the use of GaN FETs in power applications, increase the need for a PWM controller IC that can directly drive GaN FETs while being reliable and easy to use. In this paper, the radiation performance of a newly developed prototype radiation-resistant PWM controller IC for a wide power range and new technology applications in space is presented. To ensure reliability in the space environment, this prototype IC was tested for total ionizing dose and destructive single event effects. This paper analyzes the test results and identifies possible improvements to the circuit or application. A maximum total ionizing dose of 185 krad was achieved. Some variations in parameters were observed during the test. The DSEE test was performed with Xe ions to test the DSEE's disruptive strength. The DSEE test shows no destructive events for the tested conditions such as a power bus voltage of 105 V. With this information, this paper paves the way for design change and further testing in the future to obtain evaluation results according to the ESCC.