Comparative Investigation of DSG-MOSFET and Some analysis on its Performance

AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET $\mathrm{V}_{\mathrm{s}}$ normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.