兴奋剂
材料科学
接受者
Atom(片上系统)
电离能
电离
密度泛函理论
带隙
Crystal(编程语言)
电导率
类型(生物学)
结晶学
凝聚态物理
计算化学
物理化学
离子
化学
光电子学
物理
量子力学
生态学
计算机科学
程序设计语言
生物
嵌入式系统
作者
Wanjun Li,Fang Liang,Guoping Qin,Haibo Ruan,Kong Chun-Yang,Zheng Ji,Bian Ping,XU Qing,Fang Wu
出处
期刊:Chinese Physics
[Science Press]
日期:2013-01-01
卷期号:62 (16): 167701-167701
被引量:1
标识
DOI:10.7498/aps.62.167701
摘要
The formation energies and ionization energies of Ag-N dual-doped ZnO and interstitial N and H monodoped ZnO:(Ag,N) are investigated from the firstprinciples pseudo-potential approach based on density functional theory. It is found that AgZn-NO accepter pair has lower formation energy and ionization energy than Ag-N related to acceptor clusters, which demonstrates that the p-type conductivity of Ag-N dual-doped ZnO system is mainly attributed to the formation of the accepter pairs. Moreover, when ZnO:(Ag,N) system has additional N atoms in some interstitial sites of ZnO crystal, interstitial N atom and AgZn-NO accepter pair prefer to bind together to form AgZn-(N2)O donor complex which lowers doping efficiency, which is not conducive to p-type conductivity. For H doping in the ZnO:(Ag,N) system, the interstitial H atoms also prefer to bind to the AgZn-NO accepter pair, forming acceptor-donor-acceptor (AgZn-H#em/em#-NO) triplet, which not only enhances the incorporation of acceptors (AgZn-NO) but also gives rise to a shallower acceptor level in the band gap in p-type ZnO crystal. Thus, it is suggested that H-assisted Ag-N codoping is an effective method of p-type doping in ZnO.
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