捷克先令
光伏
材料科学
基质(水族馆)
带隙
薄膜
微晶
光电子学
太阳能
电镀
光伏系统
纳米技术
冶金
图层(电子)
电气工程
工程类
海洋学
地质学
作者
Jonathan J. S. Scragg,Phillip J. Dale,Laurence M. Peter,Guillaume Zoppi,Ian Forbes
标识
DOI:10.1002/pssb.200879539
摘要
Abstract Thin film heterojunction solar cells based on chalcopyrites such as Cu(In,Ga)Se 2 have achieved impressive efficiencies. However concern about the long term sustainability of photovoltaics based on scarce or expensive raw materials has prompted the search for alternative absorber materials. In this work, films of the p‐type absorber Cu 2 ZnSnS 4 (CZTS) were prepared by electroplating metallic precursors sequentially onto a molybdenum‐coated glass substrate followed by an nealing in a sulfur atmosphere. The polycrystalline CZTS films were characterized by photoelectrochemical methods, which showed films were p‐type with doping densities of the order of 10 16 cm –3 and a band gap of 1.49 eV, close to the optimum value for terrestrial solar energy conversion. Preliminary results obtained for solar cells fabricated with this material are promising. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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