CMOS芯片
NMOS逻辑
低压差调节器
电气工程
电容器
控制理论(社会学)
物理
偏压
电压
计算机科学
跌落电压
晶体管
工程类
电压调节器
人工智能
控制(管理)
作者
Raveesh Magod,Bertan Bakkaloğlu,Sanjeev Manandhar
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2018-04-25
卷期号:53 (8): 2356-2367
被引量:80
标识
DOI:10.1109/jssc.2018.2820708
摘要
Supply regulation using low quiescent current linear regulators helps in extending the battery life of power aware applications with very long standby time. A 1.24 μA quiescent current NMOS low dropout (LDO) that uses a hybrid bias current generator (HBCG) which boosts the bias current dynamically and adaptively to improve the transient response is presented in this paper. A bias-current scalable error amplifier with an on-demand pull-up/pull-down buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. A novel switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA with a low-ESR 1 μF output capacitor. Designed in a 0.25 μm CMOS process, the LDO has an output voltage range of 1-3 V, a dropout voltage of 240 mV, and a core area of 0.11 mm 2 .
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