钝化
材料科学
贝叶斯优化
氢
硅
非晶硅
图层(电子)
异质结
无定形固体
灵活性(工程)
光电子学
太阳能电池
过程(计算)
薄膜
贝叶斯概率
纳米技术
晶体硅
贝叶斯网络
实验设计
生物系统
电子工程
化学工程
计算机科学
接口(物质)
作者
Soma Kondo,Yasuyoshi Kurokawa,Kentaro Kutsukake,T. Ozawa,Markus Wilde,Katsuyuki Fukutani,Shohei Fukaya,Noritaka Usami
标识
DOI:10.1021/acsami.6c01687
摘要
Multilayer thin-film passivation structures provide high design flexibility but are inherently challenging to optimize due to the large number of process parameters and their coupled effects. In hydrogenated amorphous silicon (i-a-Si/H) passivation layers, hydrogen concentration plays a critical role in interfacial passivation and film quality, making it a physically meaningful parameter for systematic investigation. In this study, a three-layer i-a-Si/H passivation structure was examined as a representative example to verify an optimization approach that combines physical insight with Bayesian optimization. Rather than treating Bayesian optimization as a black-box search method, hydrogen concentration was explicitly incorporated into the experimental design. A comparative experiment was first conducted on the interfacial layer by varying hydrogen concentration over a wide range, followed by Bayesian optimization of the upper layers using hydrogen flow rate as the control variable. The results demonstrate that a graded hydrogen concentration profile is effective for passivation and validate the proposed approach as a practical framework for optimizing multilayer thin films.
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