异质结
材料科学
光电子学
范德瓦尔斯力
堆积
半导体
二硒化钨
光伏系统
光电效应
二极管
平面的
外延
二硫化钨
石墨烯
二硫化钼
纳米技术
薄膜
兴奋剂
光伏
砷化镓
超晶格
反常光电效应
作者
Marco M. Furchi,Andreas Pospischil,Florian Libisch,Joachim Burgdörfer,Thomas Mueller
出处
期刊:Nano Letters
[American Chemical Society]
日期:2014-07-24
卷期号:14 (8): 4785-4791
被引量:1069
摘要
Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a type-II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable, and under appropriate gate bias an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology.
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