Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf 0.5 Zr 0.5 O 2 Capacitors

this study, endurance characteristics of W/HZO/W ferroelectric capacitors were improved by optimizing the annealing conditions of the tungsten (W) bottom electrode. The effects of annealing temperature and ambient on device performance were investigated. The W/HZO/W capacitor annealed at 600 °C under vacuum exhibited an endurance improvement of more than two orders of magnitude compared to the non-annealed capacitor. Depending on the annealing condition, tungsten diffusion into the HZO film was effectively suppressed, and a thin interfacial W₁₈O₄₉ layer was formed between the bottom electrode and HZO layer. This work provides a perspective to optimize the bottom electrode annealing conditions to enhance the endurance characteristics of W/HZO/W capacitors.