记忆电阻器
异质结
材料科学
神经形态工程学
光电子学
可靠性(半导体)
非易失性存储器
电阻随机存取存储器
导电体
电压
纳米技术
电子工程
电气工程
计算机科学
人工神经网络
复合材料
物理
功率(物理)
工程类
机器学习
量子力学
作者
Ping Liu,Huiming Luo,Xiaomiao Yin,Xingfu Wang,Xuemin He,Jiangwei Zhu,Hongtao Xue,Weiwei Mao,Yong Pu
摘要
Two-dimensional materials are promising for exploring memristors with excellent performance. However, the memristor still faces challenges in insufficient reliability due to resistance-switching mechanisms of conductive filaments. In this work, a typical metal/heterojunction/metal structure (Ag/MoSe2/MoS2/Au/Ti) was proposed as the device architecture of the memristor. The device exhibits stable bipolar resistive switching behavior with a high on–off ratio, long retention time, and good endurance. The resistance-switching is achieved by adjusting the interface barrier of the MoSe2/MoS2 due to the band modulation. Moreover, we explore the essential synaptic functions of this memristor device, with outstanding voltage pulse potentiation and depression. Our work highlights the significant prospects of MoSe2/MoS2 heterojunction in artificial synapses and neural networks.
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