材料科学
光电探测器
宽带
硒
极化(电化学)
各向异性
光电子学
暗电流
电压
串扰
半导体
宽禁带半导体
作者
Guanghui Peng,Chentao Zhang,Ming‐Xuan Li,Jingyao Zhang,Chuangwei Wu,Zhongjun Qin,Liqiang Xu,Chuanqiang Wu,Hengjie Liu,Li Song,Xue Liu,Wei Gan
标识
DOI:10.1021/acsami.5c14109
摘要
Polarization-based communication and on-chip imaging devices are crucial for the next generation of multifunctional devices. Due to their thickness-dependent properties and polarization detection capabilities, single-element two-dimensional (2D) materials have emerged as promising candidates. However, achieving devices with low static power consumption, tunable polarization-sensitive photodetection, and a broadband photoresponse remains challenging. Herein, we report high-performance polarization-sensitive photodetectors based on 2D selenium (Se), photodetectors that exhibit an excellent polarization ratio of 3.09, an ultralow dark current (∼10-12 A), a fast response time (∼3 ms), as well as air stability exceeding two months without encapsulation. Its unique intrinsically anisotropic atomic chain structure enables a polarization-sensitive photoresponse, which can be effectively modulated by gate voltage and power density. The polarized light-encrypted communication and polarization imaging based on a 2D-Se photodetector are further demonstrated. This study opens up a promising pathway for next-generation high-performance and multifunctional photodetectors.
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