材料科学
钙钛矿(结构)
辐照
质子
重组
载流子寿命
光降解
兴奋剂
载流子
晶体缺陷
开路电压
光化学
结晶学
光电子学
硅
光催化
电压
核物理学
催化作用
物理
基因
化学
量子力学
生物化学
作者
В. В. Брус,Felix Lang,J. Bundesmann,Sophie Seidel,A. Denker,Bernd Rech,Giovanni Landi,H. C. Neitzert,Jörg Rappich,N. H. Nickel
标识
DOI:10.1002/aelm.201600438
摘要
Perovskite solar cells have been shown to be of extraordinary radiation hardness, considering high energetic (68 MeV) proton irradiation with doses up to 10 13 p cm −2 . In this study electrical and photoelectrical properties of perovskite solar cells with and without proton irradiation are analyzed in detail. The results reveal that proton irradiation improves the open circuit voltage, fill factor, and recombination lifetime of photogenerated charge carriers in perovskite solar cells. These enhancements are mainly a result of the lower nonradiative recombination losses in the proton irradiated devices. The proton treatment creates shallow traps, which may be associated with the proton induced point defects due to the displacements of atoms in the inorganic Pb–I framework, which act as unintentional doping sources and partially compensate deep traps originated from the photodegradation of methylammonium molecules.
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