V-Band Flip-Chip Assembled Gain Block Using In$_{0.6}$Ga$_{0.4}$As Metamorphic High-Electron-Mobility Transistor Technology

This study fabricated a 150 nm In0.6Ga0.4As metamorphic high-electron-mobility transistor (mHEMT) device with flip-chip packaging. The packaged device exhibited favorable DC characteristics with IDS = 350 mA/mm and a transconductance of 600 mS/mm at VDS = 0.5 V. A maximum available gain (MAG) of 6.5 dB at 60 GHz was achieved with 10 mW DC power consumption. A two-stage gain block was designed and fabricated. The gain block exhibited a small signal gain of 9 dB at 60 GHz with only 20 mW DC power consumption. Such superior performance is comparable to the mainstream submicron complimentary metal–oxide–semiconductor (CMOS) technology with lower power consumption.