Red-emitting μ LEDs based on graded-indium InGaN nanoplatelets

Abstract We report the fabrication of red-emitting micro-light-emitting diodes ( μ LEDs) based on InGaN nanoplatelets with graded-indium-composition p-InGaN layers. The Mg concentration in the nanoplatelet-based p-InGaN was found to be highly sensitive to precursor flux, exhibiting self-compensation effects at high doping levels. 10 × 10 μm 2 μ LEDs, consisting of about 400 nanoplatelets, exhibit electroluminescence (EL) at 665 nm with a full width at half maximum of 90 nm. Furthermore, compared with the photoluminescence peak at 618 nm, the EL redshift attributed to the quantum-confined Stark effect at low injection levels is discussed.