Impact of AlN buffer layers on MBE grown cubic GaN layers

Cubic nitrides are candidate materials for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV towards the mid infrared. This demands high-quality epitaxial growth of c-GaN as base material. We demonstrate the influence of pre-growth treatments and c- AlN buffer layers on the quality of c-GaN grown on 3C-SiC/Si substrates by molecular beam epitaxy (MBE). Optimized parameters yield extremely small surface roughness values below 1 nm of phase pure c-GaN layers with very limited stacking fault densities. Structural properties have been studied by X-ray diffraction and atomic force microscopy and surpasses the current standards, which allows for growth of more complex quantum structures for device application.