氢
内容(测量理论)
材料科学
分析化学(期刊)
化学
物理
数学
环境化学
量子力学
数学分析
作者
Yan Song,Ping Wen,Xi Hua,Zhao Jian Yang,Xu Tang,Dong Zuo-Dian
出处
期刊:Journal of physics
[IOP Publishing]
日期:2022-01-01
卷期号:2160 (1): 012006-012006
标识
DOI:10.1088/1742-6596/2160/1/012006
摘要
Abstract Aiming at the problem of hydrogen content exceeding the standard in GaAs device, the influence mechanism of hydrogen content exceeding the standard on the device is analyzed, the failure model of hydrogen content exceeding the standard in GaAs device in engineering is given, the source of hydrogen is analyzed, and the protective measures of hydrogen content exceeding the standard are given. It is of certain guiding significance for future engineering application.
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