Comparison among SiC JFETs at 1 MHz hard-switched DC/DC converter

Silicon carbide (SiC) is a wide bandgap semiconductor material that offers performance improvements over Si for power semiconductors. This paper presents the characteristics of experimental SiC JFETs and Schottky diodes. Also, this paper presents a performance comparison among these SiC devices in a 1 MHz hard-switched DC/DC converter. Further, it will identify the limitations of present SiC JFETs