Tailored sliding ferroelectricity for ultrahigh fatigue resistance in stacked trilayer MoS 2 crystals

Fatigue-resistant ferroelectric materials in two-dimensional systems are crucial for next-generation electronic devices, but the relationship between stacking configurations and ferroelectric behavior remains underexplored. Here, we synthesize trilayer MoS₂ crystals with three noncentrosymmetric stacking configurations (AAA, AAB, and ABB) using a thermal gradient chemical vapor deposition strategy. Notable variations in room-temperature ferroelectricity are observed, with polarization strength following the order AAA > AAB > ABB, up to 0.110 microcoulombs per square centimeter. The total stress time for AAA, AAB, and ABB configurations is 10⁶ seconds under a 10-microsecond pulse width. We also identify an oscillatory feature between stacking configurations and ferroelectric polarization in multilayer systems. This work establishes a distinctive paradigm for designing robust, high-performance ferroelectric materials, unlocking scalable solutions for next-generation memory and electronic applications.