Double-Gate RESURF Lateral Insulated Gate Bipolar Transistor With Built-In p-Channel MOSFET for Active Conductivity Modulation Control Throughout Drift Region

A double-gate RESURF lateral IGBT (DGR-LIGBT) with build-in p-channel MOSFET (p-MOSFET) is proposed and studied by numerical TCAD simulations. In the conventional LIGBTs, ${V}_{\text {ON}}$ is reduced by conductivity modulation in drift region. However, the stored minority carriers lead to high turn-off lose ( ${E}_{\text {OFF}}$ ). In the proposed DGR-LIGBT, the RESURF region is connected to the p-body via the built-in p-MOSFET. The primary gate switches the DGR-LIGBT between on- and off-states. In the on-state, a positive auxiliary gate voltage is applied to turn off the p-MOSFET; the RESURF region is disconnected from the p-body. Thus, the DGR-LIGBT works in fully modulated state and maintains a low ${V}_{\text {ON}}$ . Before the turn-off transient, the auxiliary gate voltage is pre-switched to a negative voltage to turn on the p-MOSFET, which electrically connects the RESURF region to the grounded p-body and extracts holes in the entire drift region. Therefore, the conductivity modulation throughout the drift region is suppressed, resulting in low ${E}_{\text {OFF}}$ .