Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply

Phosphorus (P) doping in ZnTe grown by molecular beam epitaxy (MBE) under alternating source supply method was investigated to achieve p-type P-doped ZnTe (ZnTe:P) thin films using InP as a P dopant source, and the result was compared with those grown under a simultaneous MBE growth where the source beams were supplied simultaneously. As a result, P concentration in ZnTe thin films was found to increase with increasing the InP flux, and high P concentration up to 6.6 × 1019 cm−3 was confirmed by secondary ion mass spectroscopy (SIMS) analyses. However, In incorporation was also observed in the ZnTe:P thin films, despite that the detected In concentration by SIMS was more than one order of magnitude lower than the P concentration and almost two order of magnitude lower than those grown by the simultaneous MBE. Photoluminescence measurement of ZnTe:P thin film grown under alternating source supply showed a P-related acceptor bound exciton (Ia) peak at 2.37 eV, and the intensity of Ia emission increased after the annealing treatment, indicating the activation of P acceptor. The annealing also decreases the resistivity of the film. The results clearly indicate that the alternating source supply growth is effective to obtain ZnTe:P thin films with better P doping properties.