杂质
凝聚态物理
过渡金属
氮化物
材料科学
自旋(空气动力学)
铝
冶金
化学
物理
纳米技术
热力学
量子力学
生物化学
催化作用
图层(电子)
作者
Leon Otis,Yu Jin,Victor Wen‐zhe Yu,Siyuan Chen,Laura Gagliardi,Giulia Galli
标识
DOI:10.48550/arxiv.2501.16280
摘要
We investigate the electronic properties of an exemplar transition metal impurity in an insulator, with the goal of accurately describing strongly correlated, defect states. We consider iron in aluminum nitride, a material of interest for hybrid quantum technologies, and we carry out calculations with quantum embedding methods -- density matrix embedding theory (DMET) and quantum defect embedding theory (QDET) and with spin-flip time-dependent density functional theory (TDDFT). We show that both DMET and QDET accurately describe the ground state and low-lying excited states of the defect, and that TDDFT yields photoluminescence spectra in agreement with experiments. In addition, we provide a detailed discussion of the convergence of our results as a function of the active space used in the embedding methods, thus defining a protocol to obtain converged data, directly comparable with experiments.
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