Analysis of Quantum Capacitance Effect in Ultra-Thin-Body III-V Transistor

Quantum capacitance is expected to have strong impact on the gate capacitance in III-V devices. In this paper, we present a comprehensive analysis of the quantum capacitance for III-V ultra-thin body with thin box transistor. The results show the presence of quantum capacitance effect and step like behavior due to individual contribution of sub-bands in the gate capacitance. We discuss the impact of various parameters such as insulator thickness, channel (body) thickness on the capacitance with positive and negative back gate biases.