Evaluation of the threshold voltage for short-channel MOSFET’s

It has been well known that in a long-channel MOSFET, the experimental value of the threshold voltage obtained by the square-root extrapolation method in the saturation region agrees well with the theoretical criterion. In a short-channel MOSFET, the so-determined threshold voltage depends on the drain voltage because of the drain current dependence on the drain voltage VDS. In this letter, a new method to determine the threshold voltage for VDS=0 V will be discussed.