材料科学
光电子学
响应度
光电探测器
半导体
紫外线
带隙
钙钛矿(结构)
暗电流
光探测
二向色玻璃
旋光法
纳米技术
探测器
光学
极化(电化学)
灵敏度(控制系统)
光电导性
二向色滤光片
可见光谱
双功能
比探测率
桥接(联网)
宽禁带半导体
作者
Yi Zhou,Yalin Zhai,Tao He,Peng Wan,Caixia Kan,Da Ning Shi,Fanqiang Kong,Long Han,Mingming Jiang
标识
DOI:10.1021/acsphotonics.6c01047
摘要
The monolithic integration of solar-blind ultraviolet polarization sensitivity and high-energy X-ray detection into a single semiconductor platform is urgently demanded for next-generation multimodal smart sensing, yet remains unattainable with mainstream ultrawide bandgap materials (e.g., Ga 2 O 3, hBN, diamond, and others) due to their inherent trade-offs among bandgap, stopping power, and anisotropy. Here, we break this deadlock by developing lead-free layered CsAgCl 2 perovskite single crystals via a well-controlled chemical solution deposition method. This material features an ultrawide indirect bandgap of 4.29 eV, a Cs/Ag heavy-atom constituent, and pronounced optical anisotropy. The developed Ag/CsAgCl 2 /Ag device architecture delivers a comparable polarization-sensitive solar-blind ultraviolet photodetector with a dichroic ratio of 4.6, responsivity of 560 mA/W, specific detectivity of 2.3 × 10 13 Jones, and fast response (300/270 μs) at 250 nm, outperforming all reported leadfree perovskite deepultraviolet detectors. Concurrently, leveraging a large mobility–lifetime product (μτ ∼ 2.8 × 10 –4 cm 2 V –1 ) and ultralow dark current drift (1.25 × 10 –4 μA cm –1 s –1 V –1 ), the same device showcases ultrahigh sensitivity of 10563 μC·Gy –1 ·cm –2, incredibly low detection limits of 28.7 nGy air ·s –1, and high-resolution imaging at 50 V for 50 keV X-ray photons, rivaling commercial directconversion materials. Boasting outstanding ambient stability and ultralow dark current, this CsAgCl 2 platform uniquely unifies two incompatible functions, delivering an eco-friendly, transformative paradigm for compact multimodal sensing with profound scientific and practical implications.
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