Ferroelectric control of THz emission from active spintronic interfaces Via Inverse Rashba-Edelstein effects

Spintronic THz emission, based on optically induced spin-to-charge conversion (SCC) such as Inverse Spin-Hall Effect (ISHE) and Inverse Rashba-Edelstein Effect (IREE), recently emerged as a novel method for generation of electromagnetic waves in the THz bandwidth. In this talk, after having presented our THz-emission spectroscopy set-up and optical bench, we will present our main results dealing with THz emission from Rashba states of spintronics materials such as i) sputtered topological insulator BiSb, ii) GeTe ferroelectric material and iii) from 2d material stacking based PtSe2/MoSe2 interfaces grown on the ferroelectric Lithium Niobate (LiNbO3 or LNO) substrate. The latter system provides clear control of the magnitude of the THz emission vs. the direction of the ferroelectric polarization in z-cut LNO substrate with polarization normal to the 2D layers.