Transparent Conductive Titanium and Fluorine Co‐doped Zinc Oxide Films

Abstract Aerosol‐assisted chemical vapor deposition (AACVD) was used to deposit highly transparent and conductive titanium or fluorine‐doped and titanium‐fluorine co‐doped ZnO thin films on glass substrate at 450 °C. All films were characterized by X‐ray photoelectron spectroscopy (XPS), X‐ray diffraction (XRD), UV‐Vis spectroscopy, scanning electron spectroscopy (SEM), and four‐point probe. The films were 600–680 nm thick, crystalline, and highly transparent (80–87 %). The co‐doped film consisted of 0.70 at % titanium and 1 at % fluorine, and displayed a charger carrier mobility, charge carrier concentration, and a minimum resistivity of 8.4 cm 2 V −1 s −1 , 3.97×10 20 cm −3 , and 1.69×10 −3 Ω cm, respectively. A band gap of 3.6 eV was observed for the co‐doped film. Compared to the undoped and singly doped films, the co‐doped film displayed a notably higher structure morphology (more homogenous grains with well‐defined boundaries) suitable for transparent conducting oxide applications.