Significantly enhanced performance of InAs/GaAs quantum dot lasers on Si(001) via spatially separated co-doping

We report the significantly enhanced performance of InAs/GaAs quantum dot (QD) lasers on Si(001) by spatially separated co -doping, including n -doping in the QDs and p -doping in the barrier layers simultaneously. The QD lasers are a ridge waveguide of 6 × 1000 µm 2 containing five InAs QD layers. Compared with p -doped alone laser, the co -doped laser exhibits a large reduction in threshold current of 30.3% and an increase in maximum output power of 25.5% at room temperature. In the range of 15°C-115°C (under 1% pulse mode), the co -doped laser shows better temperature stability with higher characteristic temperatures of threshold current (T 0 ) and slope efficiency (T 1 ). Furthermore, the co -doped laser can maintain stable continuous-wave ground-state lasing up to a high temperature of 115°C. These results prove the great potential of co -doping technique for enhancing silicon-based QD laser performances towards lower power consumption, higher temperature stability, and higher operating temperature, to boost the development of high-performance silicon photonic chips.