Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW material

Buried-stripe optical waveguides have been fabricated in GaAs/AlGaAs multiquantum-well material by masked Si+ implantation followed by annealing at 750°C to produce selective-area quantum well mixing. The waveguides were found to support both TE and TM modes with propagation losses of 33 and 56dBcm−1, respectively, at a wavelength of 1.15µm.