材料科学
钙钛矿(结构)
载流子寿命
光电子学
卤化物
光致发光
Crystal(编程语言)
半导体
瞬态(计算机编程)
扩散
电子迁移率
载流子
硅
物理
化学
结晶学
计算机科学
操作系统
无机化学
程序设计语言
热力学
作者
Xingjie Lv,Guoliang Yuan,Tom Wu,Z. B. Yan,Ben Xu,Guanghua Liu,Jun‐Ming Liu
标识
DOI:10.1002/aelm.202200918
摘要
Abstract Recently lead halide perovskite based solar cells have rapidly advanced and their power conversion efficiency (PCE) increased to 25.7%. The progress has been attributed to the super‐long carriers’ lifetime (τ) and long diffusion length ( L D ) of the photocarriers, however it has been a challenge to precisely characterize and understand the super‐long τ and L D of photocarriers. Here, a MAPbI 3 single crystal exhibits four different τ which increase with L D extending from nm scale to mm scale. The prior two lifetimes estimated by transient photoluminescence (TPL) spectra are in the range of ns which comes from the recombination of photocarriers in the tens of nm thick surface layer. In contrast, the third lifetime estimated by transient open‐circuit voltage is hundreds of µs, which is a result of the excess photocarriers diffusing hundreds of µm to electrodes. Finally, the fourth lifetime estimated from the transient photoconductance is as long as sub‐second since the low‐density photocarriers under an electric field drift across the mm‐scale high‐quality single crystal. This study not only clarifies the physical mechanisms of four different lifetimes of photocarriers but also facilitates the design of novel electronics with the halide perovskite semiconductors.
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