碳纳米管
材料科学
纳米技术
电子线路
晶体管
可扩展性
节点(物理)
硅
集成电路
碳纳米管的潜在应用
光电子学
场效应晶体管
碳纳米管场效应晶体管
逻辑门
计算机科学
纳米管
电气工程
碳纳米管的光学性质
电压
工程类
数据库
结构工程
算法
作者
Shu‐Jen Han,Jianshi Tang,Bharat Kumar,Abram L. Falk,Damon B. Farmer,George S. Tulevski,K.A. Jenkins,Ali Afzali,Satoshi Oida,J. A. Ott,J. B. Hannon,Wilfried Haensch
标识
DOI:10.1038/nnano.2017.115
摘要
High-performance, CMOS-compatible ring-oscillators based on carbon nanotubes are fabricated by scalable and fully manufacturable processes. As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond1,2. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.
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